Single Switch IGBT Module
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bidirectional
switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
FEATURES
10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate
KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max)
APPLICATIONS
The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from to 3300V and currents to 2400A. The is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Note: When ordering, please use the whole part number. Outline type code: F (See package details for further information)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
ABSOLUTE MAXIMUM RATINGS Stresses above those listed under `Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase 25° C unless stated otherwise
Symbol VCES VGES IC IC(PK) Pmax It Visol
Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value (IGBT arm) Isolation voltage per module
Tcase C 1ms, Tcase =115° C Tcase = 10ms, Tvj 125° C Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Al2O3 Copper 10mm 175
Continuous dissipation junction to case Continuous dissipation junction to case
Thermal resistance case to heatsink (per module)
Mounting torque 5Nm (with mounting grease) Transistor Diode
